Ion beam sputtering system for high-precision optics with high productivity
Vacuum system is equipped with RF ion-beam sputtering source, RF ion-beam source for cleaning and assisting, RF neutralizer. Broadband and Single Wave optical monitoring system allows to perform the technological processes in full-automatic mode and increases the system yield significantly. Using of dry (oil-free) pumping system, ultra-high vacuum coater design as well as load-lock vacuum chamber with robotic arm for substrates loading allow to reach maximal purity of the technological processe.
Technological devices:
- RF ion-beam sputtering source
- RF ion-beam sources for cleaning and assisting
- RF discharge neutralizer
Examples of use:
- High power laser mirrors
- Bandpass filters
- Notch filters
- Polarisers
- Beam splitters
- Rugate filters
- Broadband anti-reflection coatings
- AR coatings on laser diodes
- Coatings on optical fibers
- Low defect and low optical loss coatings
- Multi-layers filters (>100 layers) with high requirements to precision and thickness control
Coating quality:
- Low defectiveness of coatings
- Low scatter and absorption loss
- High Laser Damage Threshold (LIDT)
- Low surface roughness
- High density
- Excellent adhesion
- Low sensitivity to humidity
Technical data:
| Installation area | 3490×2730×2460 mm (L×W×H) |
| Weight | 5500 kg |
| Sputtering source | RF Grid IBS with RF neutralizer |
| Assistance source | RF Grid IBS with RF neutralizer |
| Substrate holder and coating area | Single disk Ø 440 mm (area 1520 cm2)
Planetary 7 x Ø 210 mm (area 2200 cm2) Planetary 4 x Ø 350 mm (area 3840 cm2) Other planetary by request |
| Coating uniformity | ≤±0.25% planetary 7 x Ø 210 mm
≤±0.5% planetary 4 x Ø 350 mm ≤±0.5% for single disk Ø 440 mm |
| Process control system | Automatic optical control system OCP:
OCP BroadBand, OCP SingleWave, OCP Duo (BB and SW 2 in 1) |
| Substrate materials | glass ceramics, chromatic and achromatic optical glass, quartz, potassium fluoride, sapphire, etc. |
| Number of targets, max. | 4 pcs. |
| Sputtering targets | Ti, Ta, Nb, Zr, Hf, AI, Si, SiO2 etc. |
| Coating rate | Up to 4 Å/sec (depends on the material) |
| Substrate temperature during the process (without heater) | <100 оС |
| Substrate heating system temperature | <250 оС |
| Substrate heating uniformity | ±2 оС |
| Ultimate pressure | 5E-5 Pa |
| Pumping system | Dry mechanical pump & cryogenic pump
Turbo molecular pump is optional |
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