Ion beam sputtering system for high precision optics
Vacuum system is equipped with RF ion-beam sputtering source, RF ion-beam source for cleaning and assisting, RF neutralizer. Broadband and Single Wave optical monitoring system allows to perform the technological processes in full-automatic mode and increases the system yield significantly. Using of dry (oil-free) pumping system, ultra-high vacuum coater design as well as load-lock vacuum chamber with robotic arm for substrates loading allow to reach maximal purity of the technological processe.
Technological devices:
- RF ion-beam sputtering source
- RF ion-beam sources for cleaning and assisting
- RF neutralizer
Examples of use:
- High power laser mirrors
- Bandpass filters
- Notch filters
- Polarisers
- Beam splitters
- Rugate filters
- Broadband anti-reflection coatings
- AR coatings on laser diodes
- Coatings on optical fibers
- Low defect and low optical loss coatings
- Multi-layers filters (>100 layers) with high requirements to precision and thickness control
Coating quality:
- Low defectiveness of coatings
- Low scatter and absorption loss
- High Laser Damage Threshold (LIDT)
- Low surface roughness
- High density
- Excellent adhesion
- Low sensitivity to humidity
Technical data:
| Installation area | 3540×1840×2000 mm (L×W×H) |
| Weight | 4500 kg |
| Sputtering source | RF Grid IBS with RF neutralizer |
| Assistance source | RF Grid IBS with RF neutralizer |
| Substrate holder and coating area | Single disk Ø320 mm (area 700 cm2)
Planetary 4x Ø 210 mm (area 1256 cm2) Planetary 3×Ø 320 mm (area 2100 cm2) |
| Load lock | For single disk substrate holder |
| Coating uniformity | ≤±0.25% for planetary 4 x Ø 210 mm
≤±0.5% for single disk Ø 320 mm ≤±0.5% for planetary 3 x Ø 320 mm |
| Process control system | Automatic optical control system OCP:
OCP BroadBand, OCP SingleWave, OCP Duo (BB and SW 2 in 1) |
| Substrate materials | glass ceramics, chromatic and achromatic optical glass, quartz, potassium fluoride, sapphire, etc. |
| Number of targets, max. | 4 pcs. |
| Sputtering targets | Ti, Ta, Nb, Zr, Hf, AI, Si, SiO2 etc. |
| Coating rate | Up to 5 Å/sec (depends on the material) |
| Substrate temperature during the process (without heater) | <100 оС |
| Substrate heating system temperature | <250 оС |
| Substrate heating uniformity | ±2 оС |
| Ultimate pressure | 5E-5 Pa |
| Pumping system | Dry mechanical pump & cryogenic pump
Turbo molecular pump is optional |
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