Magnetron sputtering is a technology for thin films depositing in a vacuum chamber and in a working gas using cathode sputtering of the target material in crossed electric and magnetic fields.
Electrically conductive materials, such as conductors and semiconductors, are used as targets in medium-frequency DC and AC magnetrons. The use of magnetic materials is limited by the thickness of the target and requires the use of a special magnetic system. For the sputtering of dielectric materials, the RF version of the magnetron is used, which also requires a RF-generator and a matching network for the applied discharge system.
Application:
Round magnetrons are used in vacuum laboratory and batch equipment with substrate sizes up to 250 mm.
Main tasks:
– production of optical, semiconductor devices, thin-film hybrid integrated circuits, piezoelectric products, acoustoelectronics;
– deposition of functional coatings: optical, conductive, protective, dielectric, metallization of the surface of plastic and glass products, etc.
Planar round magnetrons are used in Elato, Atis, Smart, Izolab.
Technical data:
| Parameters | Basic | Options |
| Source type | planar round | |
| Working pressure | 0,2 ÷ 2 Pa | |
| Target material | non-magnetic, electrically conductive materials and semiconductors (Si, Ge, etc.) | magnetic materials, dielectrics |
| Target size | Ø50.8, 76.2, 101.6, 127, 166, 203.2, 254, 304.8 mm | by request |
| Anode | yes | |
| Magnetic system | permanent magnets NdFeB+2xNi | |
| Gas distributor | no | by request |
| Target cooling | indirect | direct |
| Power supply | DC, DC-pulse, MF-AC | RF, HiPIMS |
| Specific maximum power DC/DC-pulse/MF-AC | 15,5 W/cm² | 38,8 W/cm² |
| Specific maximum power RF | 5,2 W/cm ² | 12,9 W/cm² |
| Target utilization | 15…40 % | >45 % |
| Gas flow (depends on pumping) | 15…250 cm3/min | |
| Mean time between maintenance (mtbm) | 50 h | |
| Cooling | water | |
| Cooling water temperature | 18…25 °C | |
| Water pressure | 2…4 bar | |
| Water flow | >0,7 l/min/kW | |
| Working gas | Ar, O² and other | |
| Working gas purity | 99.99 % | |










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