Plasma Enhanced Chemical Vapor Deposition (PECVD) system for coatings from the gas phase with activation of working gases by induction discharge plasma (ICP)
Features:
- Excellent adhesion of the coatings
- Higher deposition rate in comparison with PVD methods
- Low temperature processes without decreasing film parameters
- Films conformity
- Possibility to make coatings on the substrates of complicated shapes with high level of uniformity
- Fully automatic system of ICP impedance matching
- Bigger maintenance intervals (self-cleaning function)
- A wide range of options which help to increase vacuum system capabilities and implement variety of tasks with ICP CVD method of deposition
Additional options:
- Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber
- Scrubber for the exhaust cleaning
- Gas cabinets for the toxic, flammable and explosive gases
- Thermostat
- Systems of heating the walls of technological vacuum chamber and pipes
- Additional external pumping circuit for achieving an extremely clean deposition process
- Additional gas lines
- Nitrogen (N2) chamber filling system
Technical data:
| Ultimate residual pressure in the clean technological vacuum chamber | 9E-4 Pa |
| Maximum substrate diameter | 200 mm |
| Maximum substrate thickness | 3 mm |
| Substrates material | Gallium arsenide (GaAs), silicon (Si), glass, etc. |
| Coating thickness uniformity (excluding edge zone 5 mm) | ± 5,0 % |
| Coating rate (for SiO2) | up to 140 nm/min |
| Distance between inductive RF discharge and substrate holder | Adjustable
(for regulating coatings thickness uniformity) |
| Function of cleaning and activation of substrate surface | ICP discharge in the inert gases or oxygen (O2) |
| Cleaning of technological vacuum chamber | Self-cleaning – ICP discharge in the reactive gases |
| Gas system | Integrated multichannel gas station
with configuration function, possibility to install up to 10 gas channels |
Additional features:
- Liquid reactive chemicals supplying System
- Electrostatic clamping of the substrate
- Substrate holder design with RF bias, which allows the energy spectrum of the plasma to be adjusted.
- Optical emission spectroscopy
- Integration into clean room
- Substrate thermal stabilization system with helium (He) supply under the bottom of the substrate
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