System for plasma chemical and reactive ion etching with induction discharge plasma activation (ICP)
Features:
- The etching process is a dry process
- Absence of the substrate damages while simultaneous high-density plasma
- High selectiveness of the etching process
- High etching rate
- Low temperature of the process
- Possibility to etch substrates with complicated shape
- Possibility to implement deep plasma etching
- A wide range of etching materials
- Fully automatic system of ICP impedance matching
- A wide range of options which help to increase vacuum system capabilities and implement variety of tasks.
- Adjusting the distance between the ICP and the substrate
Additional options:
- Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber
- Scrubber for the exhaust cleaning
- Gas cabinets for the toxic, flammable and explosive gases
- Thermostat
- Systems of heating the walls of technological vacuum chamber and pipes
- Additional external pumping circuit for achieving an extremely clean deposition process
- Additional gas lines
- Nitrogen (N2) chamber filling system
Technical data:
| Ultimate residual pressure in the clean technological vacuum chamber | 9E-4 Pa |
| Maximum substrate diameter | 200 mm |
| Maximum substrate thickness | 3 mm |
| Substrates material | Gallium arsenide (GaAs), silicon (Si), glass, etc. |
| Distance between ICP and substrate holder | Adjustable
(for regulating coatings thickness uniformity) |
| Gas system | Integrated multichannel gas station
(with configuration function) with the possibility to install up to 10 gas channels |
Additional features:
- Liquid reactive chemicals supplying System
- Electrostatic clamping of the substrate
- Substrate holder design with RF bias, which allows the energy spectrum of the plasma to be adjusted.
- Optical emission spectroscopy
- Integration into clean room
- Substrate thermal stabilization system with helium (He) supply under the bottom of the substrate
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