System for plasma enhanced chemical vapor deposition processes with Capacitively Coupled Plasma (CCP)
Features:
- Excellent adhesion of the coatings
- Higher deposition rate
- Low temperature processes without decreasing film parameters
- Possibility to deposit coatings on the substrates of complicated shapes
- Fully automatic system of CCP impedance matching
- Bigger maintenance intervals (self-cleaning function)
- A wide range of options which help to increase vacuum system capabilities and implement variety of tasks with PECVD method of deposition
Additional options:
- Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber
- Scrubber for the exhaust cleaning
- Gas cabinets for the toxic, flammable and explosive gases
- Thermostat
- Additional external pumping circuit for achieving an extremely clean deposition process
- Additional gas lines
- Nitrogen (N2) chamber filling system
- System of supplying liquid reactive chemicals
Technical data:
| Ultimate residual pressure in the clean technological vacuum chamber | 9E-4 Pa |
| Maximum substrate diameter | 200 mm |
| Maximum substrate thickness | 3 mm |
| Substrates material | Gallium arsenide (GaAs), silicon (Si), glass, etc. |
| Controllable pressure range in the technological vacuum chamber during the process | 2 – 1000 Pa |
| Maximum coating thickness uniformity (excluding 5 mm edge) | ± 5,0 % |
| Deposition rate (for SiO2) | up to 140 nm/min |
| Distance between CCP and substrate holder | Adjustable
(for regulating coatings thickness uniformity) |
| Function of cleaning and activation of substrate surface | CCP discharge in the inert gases or oxygen (O2) |
| Cleaning of technological vacuum chamber | Self-cleaning – CCP discharge in the reactive gases |
| Gas system | Integrated multichannel gas station
(with configuration function) with the possibility to install up to 10 gas channels |
Additional features:
- Electrostatic fixation of substrates
- System of cryogenic cooling of the substrate
- System of the substrate thermostabilizing with helium (He) supply to the bottom side of the substrate
- Substrate holder design with RF bias, which allows to adjust the energy spectrum of the plasma
- Single wave or broadband optical monitoring system
- Optical emission spectroscopy
- Laser interferometry
- Installation into clean room
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