System for reactive ion etching with activation by capacitively coupled plasma (CCP)
Features:
- The etching process is a dry process
- High selectiveness of the etching process
- Low temperature of the process
- Possibility to etch substrates with complicated shape
- A wide range of etching materials
- Fully automatic system of CCP impedance matching
- A wide range of options which help to increase vacuum system capabilities and implement variety of tasks in of etching.
Additional options:
- Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber
- Scrubber for the exhaust cleaning
- Gas cabinets for the toxic, flammable and explosive gases
- Thermostat
- Systems of heating the walls of technological vacuum chamber and pipes
- Cryogenic substrate cooling system
- Additional gas lines
- Nitrogen (N2) chamber filling system
Technical data:
| Ultimate residual pressure in the clean technological vacuum chamber | 9E-4 Pa |
| Maximum substrate diameter | 200 mm |
| Maximum substrate thickness | 3 mm |
| Substrates material | Gallium arsenide (GaAs), silicon (Si), glass, etc. |
| Controllable pressure range in the technological vacuum chamber during the process | 2-100 Pa |
| Distance between CCP and substrate holder | Adjustable
(for regulating coatings thickness uniformity) |
| Gas system | Integrated multichannel gas station
(with configuration function) with the possibility to install up to 10 gas channels |
Additional features:
- System of supplying liquid reactive chemicals
- Electrostatic fixation of substrates
- System of the substrate thermostabilizing with helium (He) supply to the bottom side of the substrate
- Substrate holder design with high-frequency bias supply, which allows to adjust the energy spectrum of the plasma
- Single wave or broadband optical monitoring system
- Optical emission spectroscopy
- Laser interferometry
- Installation into clean room
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